Search
Filters

51318-11612-Electrochemical behavior of titanium and titanium nitride monolithic and layered thin films

The 100 nm Monolithic Ti and TiNx thin films were deposited onto (100) Si wafers using PVD processes. The electrochemical and semi-conductive behavior of these films was studied at room temperature in one of three electrolytes.

Product Number: 51318-11612-SG
Author: Golnaz Najaf Tomaraei / Amir Poursaee / Marian S. Kennedy
Publication Date: 2018
$0.00
$20.00
$20.00

Corrosion increasingly is impacting performance and reliability of microelectronic devices, which may be due to a combination of the decreasing feature sizes in these devices, the expanding range of environments in which these devices operate or the evolution of materials utilized in these devices. The layered configurations of microelectronics may facilitate either interfacial or galvanic corrosion, and therefore work is needed to characterize the susceptibility to corrosion. Since transition metals and their compounds are widely used as either adhesion or barrier layers, this study focuses on understanding the corrosion of Ti and TiNx films. The 100 nm Monolithic Ti and TiNx thin films were deposited onto (100) Si wafers using PVD processes. The electrochemical and semi-conductive behavior of these films was studied at room temperature in one of three electrolytes with 3 wt.% chloride ions but varying pH values ranging from 2 to 13. In addition, the performance of electrically coupled Ti and TiNx were studied. Four replicates of each test condition (sample type and electrolyte) were monitored up to 105 days. Results indicated a more negative potential for the Ti films, TiNx films and coupled Ti and TiNx films in basic electrolyte when compared to replicates within either the acidic or neutral electrolytes. Galvanic effects between the coupled Ti and TiNx films were also observed when they were placed into an acidic electrolyte.

Key words: thin films, electrochemistry, titanium, titanium nitride, galvanic corrosion

Corrosion increasingly is impacting performance and reliability of microelectronic devices, which may be due to a combination of the decreasing feature sizes in these devices, the expanding range of environments in which these devices operate or the evolution of materials utilized in these devices. The layered configurations of microelectronics may facilitate either interfacial or galvanic corrosion, and therefore work is needed to characterize the susceptibility to corrosion. Since transition metals and their compounds are widely used as either adhesion or barrier layers, this study focuses on understanding the corrosion of Ti and TiNx films. The 100 nm Monolithic Ti and TiNx thin films were deposited onto (100) Si wafers using PVD processes. The electrochemical and semi-conductive behavior of these films was studied at room temperature in one of three electrolytes with 3 wt.% chloride ions but varying pH values ranging from 2 to 13. In addition, the performance of electrically coupled Ti and TiNx were studied. Four replicates of each test condition (sample type and electrolyte) were monitored up to 105 days. Results indicated a more negative potential for the Ti films, TiNx films and coupled Ti and TiNx films in basic electrolyte when compared to replicates within either the acidic or neutral electrolytes. Galvanic effects between the coupled Ti and TiNx films were also observed when they were placed into an acidic electrolyte.

Key words: thin films, electrochemistry, titanium, titanium nitride, galvanic corrosion

Also Purchased